Hamamatsu linear detector DZA-VVIR-HM for Hamamatsu InGaAs array types G9211-G9214 and G9205-G9208. . where N(sat) is the linear full well capacity stated as the number of electrons and N(noise) is the total value of the read and dark noise, also expressed as the number of electrons. MPPC (Multi-Pixel Photon Counter) is a device called SiPM, which is a photon counting device that is a multi-pixelized Geiger mode APD. Hamamatsu PMT and for the two voltage divider configurations. K. Hamamatsu is working on higher resolution array (smaller pixels). Single 3. CCD/CMOS/NMOS image sensors for UV-VIS-NIR used for semiconductors, analytical instrumentation, spectroscopy applications and color measurement. Two InGaAs chips with different cutoff wavelengths are arranged very accurately in series. Our products include optical sensors and components, cameras, light & radiation sources, lasers, and customized solutions. Current output type S3901 to S3904 series, etc. The wavelength-swept light source sweeps the wavelength temporally and shines its output light on the sample, and the generated interference light is detected with a differential detector. The scanning circuit operates at low power consumption and is easy to handle. 2025 - Si photodiodes P. An image in the depth direction of the sample is acquired by Fourier transforming the obtained wavelength information. ) can be selected. Thanks to improvements in the fabrication process, Hamamatsu now offers extended InGaAs image sensors with cutoff wavelengths ranging from 1. Charge amplifiers are configured with CMOS transistor array and areconnected to each pixel of the InGaAs One-dimensional image sensors suitable for spectrophotometry, industrial applications, and scientific measurement. Thermopile detectors Thermopile detectors are thermal detectors that utilize the Seebeck effect in which a thermal electromotive Hamamatsu offers both linear and area InGaAs image sensors with cutoff wavelengths up to 2. 6 - 11 - Si APD P. While conventional line sensor cameras suffer from low brightness under high-resolution imaging, X-ray TDI cameras improve the image brightness, resulting in enhanced images. Charge amplifiers are configured with Infrared detectors are widely used in diverse field including measurement, analysis, industry, communication, agriculture, medicine, physical and chemical science, astronomy and space. These linear image sensors contain a CMOS charge amplifi er array, a CDS circuit, an offset compensation circuit, a shift register and a tim- The S11639-01 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (14 × 200 μm). Hamamatsu’s SPAD (Single Photon Avalanche Diode) is an detection probability is nearly 100% at 10 keV, but falls to just a few percent at 100 keV. See the datasheets. To use all available functions on this site, JavaScript must be enabled on your browser. 3 to +6 V Clock pulse voltage V(CLK) Ta=25 °C -0. ×2 in. 16 element array capable of detecting up to 5 &mu;m band The P15742 series is one-dimensional InAsSb photovoltaic detector array in a ceramic DIP (dual inline package). 672 mm-High sensitivity: with a gain switch function&nbsp;[Red: 65 V/(lx·s), Green: 85 V/(lx·s), Blue: 35 V/(lx·s)]-Spectral A 10 ch module specifically designed for multi-wavelength detection and a 2 ch module with an excitation light source for fluorescence detection are available. com 1 TDI-CCD image sensors capture clear and bright images even under low-light-level conditions. Residuals of a 1-coefficient linear fit – top, and 3-coefficients quadratic fit – bottom. Suitable applications range from biomedical fluorescence applications to detector array. By using the binning operation, the S7031-1006S can be used as a linear image sensor having a long aperture in the direction of the device length. Most appropriate for imaging linearly moving objects or where the aspect ratio is significantly asymmetric. ) 4. Type II superlattice infrared detector with a sensitivity up extended to 14 μm band using Hamamatsu unique crystal growth technology and process technology. Other features include high sensitivity and high resistance in the UV region. They have a higher signal-to-noise ratio (SNR) than PIN photodiodes, as well as fast time response, low dark current, and high sensitivity. TDI-CCD image sensors Operating the back-thinned CCD in TDI mode delivers high sensitivity. This photodiode has a large photosensitive area with high sensitivity and smoothly varying spectral response characteristics in UV region. By doing binning operation (an operation which adds signals of pixels in the vertical direction), they can be used as a linear image sensor that is long in the vertical register direction, so they are suitable for detectors of spectrophotometers. The binning operation offers significant improvement The S12379 is a high-speed line rate, front-illuminated CCD linear image sensor designed for machine vision cameras. com S10077 1 Pixel pitch: 14 µm Analytical instruments Pixel height: 50 µm Position detection Image reading 1024 pixels Single power supply operation: 3. 5 µm wavelengths. and its affiliates. A CDS (correlated InGaAs area image sensors are two-dimensional image sensors that have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes for near infrared (NIR) and short wavelength infrared (SWIR) regions. However, Hamamatsu put in a lot of effort to guarantee top-quality extended InGaAs. 1 × 1. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. The S15796 series operates from a single 5 V supply making it suitable for use in low cost spectrometers. 18 mm Pixel size (H × V) 10 32-channel linear anode PMT assembly H7260 with preamplifier and high voltage power supply. All three formats are available as PMT assemblies and modules. in collaboration with Hamamatsu, this board includes a Hamamatsu G920x InGaAs array, followed by two buffer amplifiers, a multiplexer to select a voltage from one of these two amplifiers, and a 1MSPS SAR ADC with integrated ADC driver. 7-2. For reading out the former type, the user must implement a charge amplifier circuitry while the latter type has a built-in charge amplifier. com S11639-01 S11639-21 The S11639 series is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (14 × 200 µm). Filters are attached to the pixels in the following order: R, G, and B. The S11639-01 operates from a single 5 V supply making it suitable for use in low cost spectrometers. Type no. 14 - CMOS linear image sensors P. Types of NMOS linear image sensors Hamamatsu NMOS linear image sensors are available in the following two readout methods. Hamamatsu’s InGaAs linear image sensors have low dark current, low readout noise, and high line scan rate, providing high sensitivity, high dynamic range, and high speed. The G12230-512WB provides high S/N over a wide spectral response range. While the detector won’t explode or disintegrate (well, maybe disintegrate if it’s reaaaaalllyyy strong laser light), the wirebond will disconnect and create an open circuit. These InGaAs LIS series are designed for near infrared multi-channel spectrophotometry, non-destructive inspection, and DWDM wavelength monitor applications. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. 15 - 17 - Mini-spectrometers P. Dec 15, 2018 · Developed by Analog Devices, Inc. High resistance and high sensitivity in the ultraviolet region are the other features of the S11639-01. This makes the S7031-1006S suites for use in spectrophotometry. These sensors consist of an InGaAs photodiode array, charge amplifiers, offset compensation circuit, and timing generator formed on a CMOS chip. Features-High UV sensitivity-High UV sensitivity than previous type Photomultiplier tubes (PMTs) suitable for applications that require high speed, low noise, and high gain. Available sensor preamplifier modules DZA-VVIR-LD for Sensors Unlimited InGaAs array types SUxxx-LD and SUxxx-LX with RT or T1 pinout. These extended InGaAs image sensors are alternatives to mercury cadmium telluride (HgCdTe or MCT) sensors, which have been often used to detect 1. The detector will be non-linear well before this current range, and exceeding it may cause damage—especially in devices with a wirebond connection. Vertical X Avalanche Diodes (APD) Detectors: Introduction and Recent Advances* Alfred Q. 8 × 0. Linear Silicon Ccd Detector Hamamatsu, supplied by Hamamatsu, used in various techniques. Baron Harima RIKEN & SPring-8/JASRI International Symposium on the Development of Detectors for Particle, Astro-Particle, and Synchrotron Radiation Experiments “SNIC” SLAC, Stanford, April 2006 *Focus on Fast X-Ray Detection &nbspThe S13774 is a CMOS linear image sensor developed for industrial cameras that require high-speed scanning. This product consists of an InGaAs photodiode array and CMOS chipsmade up of charge amplifiers, offset Aug 29, 2024 · Detector type: Examples: Detector type: Examples: Deep cooled CCD: Andor iVac 316: 10 sec-1-stage TE cooled BT-CCD: Hamamatsu S7031 series: 2-stage TE cooled InGaAs: Hamamatsu G9206: 1 sec-Non-cooled BT-CCD: Hamamatsu s10420 series: 1-stage TE cooled InGaAs: Hamamatsu G9203/G9204/G9214: 100 msec-10 msec-Non-cooled CMOS: Hamamatsu S11639 Since Raman scattered light is extremely faint, a detector with high sensitivity is required. Hamamatsu CMOS linear image sensors are sensitive to non-visible light (ultraviolet, near infrared) as well as visible light, so they are commonly used in measurement and inspection that require detection of non-visible light. Each photodiode has a large active area, high sensitivity yet very low noise, delivering a high S/N even at low light levels. S10200-02-01 S10202-08-01 S10202-16-01S10201-04-01 www. 672 mm-High sensitivity: 23 V/(lx・s)-Simultaneous charge Hamamatsu electron multipliers have a high gain (multiplication factor) yet low dark current, allowing operation in photon counting mode to detect and measure extremely small incoming particles and their energy. Voltage output type S3921 to S3924 series The S7031-1006S is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The CMOS chip consists of charge amplifiers, a shift register, and a timing generator. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectrosco-py. LaBr 3 crystal coupled with 2 in. Hamamatsu will work with users on developing customized ASICs 6. ) or 12-bit (low-speed mode: 25 klines/s max. B InGaAs linear image sensors are one-dimensional image sensors for the visible (VIS), near infrared (NIR), and short wavelength infrared (SWIR) regions. For the A/D converter resolution, either 10-bit (high-speed mode: 100 klines/s max. Features-Pixel size: 8 × 8 μm -2048 pixels-High-speed multiport readout (Readout speed: 40 MHz max. We offer over 200 standard linear and area image sensors covering the short wavelength infrared (SWIR), near infrared (NIR), visible (VIS), ultraviolet (UV), and X-ray regions. Features of Hamamatsu’s devices for UV detection Lineup Product information Feb. Hamamatsu is working on improving crosstalk. NMOS linear image The S15796 series is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (7 × 200 μm). 12. Dynamic range is a ratio of the maximum light level that a detector can detect without saturation or deviation from linearity and of the minimum detectable The G14237-512WA is an InGaAs linear image sensor designed for Raman spectroscopy measurement using a 1064 nm laser. The approximate range of electrons inside a Si direct photodiode is 1 μm at 10 keV and 60 μm at 100 keV. Image CMOS linear image sensor Digital output, built-in /10-bit A/D converter, single power supply operation www. Hamamatsu’s 3-transistor linear NMOS and CMOS image sensors can be categorized as current-output and voltage-output types. Based on long experience involving photonic technology, Hamamatsu provides a wide variety of infrared detectors in order to meet a large range of application needs. 6µm, which are called “extended wavelength. 5. [Figure 1-3] Detection probabilities of Si direct photodiodes X-ray energy (keV) (Theoretical value) KSPDB0018EA Detection probabilities of Si This manual describes major characteristics and applications of Hamamatsu infrared detectors, including InGaAs PIN photodiodes, PbS and PbSe photoconductive detectors, InAs and InSb photovoltaic detectors, MCT (HgCdTe) photo-conductive detectors, pyroelectric detectors, and hybrid detectors used in a combination of two or more detectors. As can be seen from the figure, the pulses are separated from each other according to the number of detected photons such as one, two, three photons MPPC (Multi-Pixel Photon Counter) is a device called SiPM, which is a photon counting device that is a multi-pixelized Geiger mode APD. 32-channel linear anode PMT assembly H7260 with preamplifier and high voltage power supply. The G11508 series is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. This website or its third-party tools use cookies, which are necessary to its functioning and required to achieve the purposes illustrated in this cookie policy. Hamamatsu is working on IR version of the array. NMOS linear image The S11639-01 from Hamamatsu is an CMOS linear image sensor with high sensitivity. In a high-performance cooled CCD camera, the well capacity is proportional to the size of the individual photodiode, such that the maximum number of electrons InGaAs area image sensors are two-dimensional image sensors that have a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes for near infrared (NIR) and short wavelength infrared (SWIR) regions. 3 to 5 V 8-bit/10-bit switchable ADC Low power consumption S10226-10 CMOS Linear Image Sensor - Hamamatsu Corporation - Compact surface mount package (2. Oct 7, 2016 · The linear relationship between the gain and overvoltage for three SiPMs manufactured by Hamamatsu: S12571-100C, S12571-050C, and S12571-025C. Menu PSDs are optoelectronic position sensors that utilize photodiode surface resistance. The official website of Hamamatsu Corporation whose mission is to advance science and industry through photonic technologies. it has a long photosensitive area (effective photosensitive area length: 28. InGaAs multichannel detector head C8061-01, C8062-01 Radiation thermometry Multichannel detector head controller C7557-01 Non-destructive inspection Off set compensation circuit Wide dynamic range *1: A major source of noise in charge amplifi ers is the reset noise generated when the integration capacitance is reset. Demos are available for evaluation. Improved features and characteristics of CMOS linear image sensors make them suitable for various applications including spectroscopy, machine vision, and barcode scanning. Multichannel detector head controller C7557-01 (when using a multichannel detector head): Allows easy data acquisition via USB connection to a PC 3. 4. Charge amplifiers are configured with CMOS transistor array and areconnected to each pixel of the InGaAs 2. The column-parallel readout system, which has a readout amplifier and an A/D converter for each pixel, allows high-speed readout. Features-Pixel size: 14 × 42 μm-2048 pixels-Effective photosensitive area length: 28. CMOS linear image sensor S12706 High sensitivity photosensitive area with minute pixels www. 5 µm (Fig. com Absolute maximum ratings Structure Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0. S3904-1024F is a <p>Hamamatsu&#39;s new linear array photomultiplier tube (PMT) products offer high cathode sensitivity, high gain, and high-speed response (fast rise time and narrow transit time spread). For each of the arrays mentioned, compatible types may be available and can be possibly operated with one of Linear array 16, 32 5 µm long-pass filter 5 to 14 µm Flat package Temperature measurement Area array 8 × 8 TO-8 Temperature measurement, human body sensing [Table 1-1] Hamamatsu thermopile detectors 1. com 1 The S15254-2048 and S15257-2048 are back-thinned CCD linear image sensors with an internal electronic shutter for spectrometers. CMOS linear image sensors High sensitivity, photosensitive area with vertically long pixels www. 9 Photon Counting Detectors –SiPM and SPAD 1 11-Aug-20 10 Using SNR Simulation to Select a Photodetector 1 18-Aug-20 To register and attend other webinar series, please visit link below: 32-channel linear anode PMT assembly H7260 with preamplifier and high voltage power supply. 12 - 13 - CCD area image sensors P. 18 Devices for UV Detection MPPC (Multi-Pixel Photon Counter) is a device called SiPM, which is a photon counting device that is a multi-pixelized Geiger mode APD. A commonly used detector is a photomultiplier tube, which uses dynodes to provide intrinsic gain to the detector. ” Due to the mismatch of the lattice constant of InGaAs and InP, the quality of the thin films is reduced. Cameras useful for in-line imaging applications requiring high-speed operation with high sensitivity. , Side-on type, Multialkali photocathode (Effective area : 8 x 24 mm/Spectral response : 185 to 900 nm) Feb 2, 2014 · Noise inherent to a detector limits the lowest detectable light level, whereas a variety of phenomena that are unique to the detector, cause a non-linear behavior and eventually saturation. Download: Download high-res image (189KB) Download: Download full-size image; Fig. Features analysis and measurement fields. 8 µm to 2. Quantum cascade photodetector Ultrafast mid-infrared photodetector with a response bandwidth of over 20 GHz. vision cameras (dimension measurement, foreign object inspection). Our PMTs include bare tubes, assemblies, and modules offering a wide selection of photosensitive areas and spectral responses. The S10124-1024Q-01 is self-scanning photodiode arrays designed specifically as detectors for spectroscopy. These image sensors use a resistive gate structure that allows a high-speed transfer. 6 mm). Their applications include spectrometry, industrial sorting, and medical imaging. They have a back-illuminated structure that achieves low crosstalk. 050 12. Learn more about how temperature affects SiPM performance. InGaAs linear image sensors Near infrared image sensors (0. 2. Bioz Stars score: 86/100, based on 1 PubMed citations. 3. InGaAs linear Image sensors InGaAs area image sensors Related products Technical notes 3 / 19 Hamamatsu image sensors Hamamatsu has developed and produced image sensors supporting broad wavelength regions such as near infrared, visible light, ultraviolet, vacuum ultraviolet (VUV), soft X-rays, and hard X-rays. Figure 1-3 shows an equivalent circuit for one pixel. These linear image sensors contain a CMOS charge amplifi er array, a CDS circuit, an offset compensation circuit, a shift register and a tim-ing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range. It is also beneficial to simultaneously detect the multiple wavelengths that are dispersed, and for this reason, a linear image sensor is used. R. 1. This means our Hamamatsu electron multipliers are ideal for electron spectroscopy, vacuum UV spectroscopy such as ESCA (electron The G11508 series is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. The charge transferred to the detection node is converted into a voltage by MOS2 via the relation Q=CV. × 4 ports)-Line, pixel binning, area scanning-High CCD node sensitivity: 21 μV/e- typ. 48 × 0. 9 to 1. Sensitive to near-infrared wavelengths. Balanced detectors These are differential amplification type photoelectric conversion modules containing two Hamamatsu photodiodes with balanced characteristics. Unlike discrete element detectors such as CCDs, PSDs provide continuous position data, high position resolution, and high-speed response. 3). Line scan cameras are simple to operate and integrate into a higher level inspection system. 025 mm Number of total pixels 256 512 pixels Number of effective pixels 256 512 pixels The G12230-512WB is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. High-speed imaging of moving samples is a challenging even in bright conditions, but our TDI cameras turn linear movement of the sample into an advantage by coordinating signal accumulation in the sensor with sample movement. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. While it is an optical semiconductor device, it has an excellent detection ability, so this device can be used in a variety of applications to detect very low-level light at the photon counting level. 4 × 9. com 1 The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. 7 µm) with high-speed data rate G9494-256D/-512D www. Features-Pixel size: 7 × 7 μm-4096 pixels-Effective photosensitive area length: 28. The detection node is reset by MOS1 to the reference level (voltage on RD) in order to read the next signal. 3 to +6 V Start pulse voltage V(ST) Ta=25 °C -0. Hamamatsu Photonics develops and manufactures image sensors with high sensitivity and a wide dynamic range that are ideal for high precision measurement such as spectrophotometry, as well as industrial measurement. , image sensor). Noise accompanying the charge detection by FDA is determined by the capacitance of the node but can be Block diagram (InGaAs linear image sensor) KMIRC0033EE CMOS IC 1 - 2 Operating principle In the CMOS IC for InGaAs linear image sensors, a “charge amplifier and sample-and-hold circuit” array is formed and connected one-to-one to each pixel on the InGaAs photodiode array. These linear image sensors consist an InGaAs photodiode array and charge amplifi ers, offset compensation circuit, shiftregister, and timing generator formed on a CMOS chip. Technical note / InGaAs linear image sensors - Hamamatsu Silicon photodiode array is a sensor with multiple Si photodiodes arranged in a single package. Designed specifically for measuring the Raman spectral range, the cutoff wavelength has been reduced from that of the previousproduct (G11508-512SA) to achieve low dark current. linear mode APD operates in this region 🄫Hamamatsu Photonics K. 3 to +6 V APDs are photodiodes with internal gain produced by the application of a reverse voltage. CCD linear image sensors Back-thinned CCD image sensors with electronic shutter function S15254-2048S15257-2048 www. 3-1. g. Feb 11, 2011 · Proportionality of a 2 in. ZERO BIAS - scores, article reviews, protocol conditions and more InGaAs linear arrays and segmented-type photodiodes. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. Line scan cameras usually utilize linear diode array (LDA), CCD or CMOS detector technology. It can be used in a wide range of applications such as light position detection, imaging, and spectrophotometry. Features-Pixel size: 14 × 200 μm-2048 pixels-Effective photosensitive area length For photon counting, detectors with intrinsic gain are necessary. Linear arrays are available in 8 channels, 16 channels, and 32 channels. InGaAs Photodiodes Spectral response range 2 Response speed・・・ 4 The G10768-1024DB is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. Menu 4-segmented InGaAs PIN photodiodes sensitive in the near-infrared region. Photodiodes do not have intrinsic gain which means 1 incident photon will, at most, allow the flow of 1 electron, which is too small of a signal to overcome the noise. In contrast to these, the PSD is a monolithic device designed to detect the position of incident light. situations it is also a function of the detection bandwidth www. 672 mm) consisting of 4096 pixels, each with a pixel size of 7 x 7 μm. Features-Pixel size: 14 × 200 μm-2048 pixels-Effective photosensitive area length 2. Hamamatsu’s InGaAs linear image sensors have low dark current, low readout noise, and high line scan rate, providing high sensitivity, high dynamic range, and high speed. The photosensitive area is divided in two dimensions. These cameras are also well-suited for low-light scanning applications that are too dim to for a line scan sensor. to the node. External power supply, A/D converter (Whether these are required depends on the multichannel detector head and driver circuit. Pixel size [µm (H) × µm (V)] Number of effective pixels Line rate*1 Frame rate*2 Mar 2, 2012 · An x-ray line scan camera's major component is a linear detector coupled to a scintillator. The S11639-01 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (14 × 200 μm). These are environmentally friendly infrared detectors that do Dec 15, 2018 · Multiplexer Timing (2) – Clock burst with return to zero between pixel reads (bursts) – the same as C8062, the standard InGaAs multichannel detector head offered by Hamamatsu The three different timing modes are tested, and the timing diagrams and test results are shown in Figures 9-3 to 9-18. One-dimensional linear arrays with equally spaced photosensors. 28mm dia. hamamatsu. -Anti-blooming function Figure shows output pulses from the MPPC obtained when it was illuminated with the pulsed light at photon counting levels and then amplified with a linear amplifier and observed on an oscilloscope. It employs a photosensitive area with vertically long pixels (14 x 200 µm). The signal processing circuit uses CTIA (Capacitive Transimpedance amplifiers) that allow signal readout while simultaneously integrating signals in all pixels via sample-and-hold The S13488 is a CMOS linear image sensor that is sensitive to red (630 nm), green (540 nm), and blue (460 nm). High sensitivity in the ultraviolet region, front-illuminated CCD Despite a front-illuminated CCD, the S11151-2048 offers high sensitivity in the ultraviolet region (200 nm) nearly equal to back-thinned CCD. 3 V power supply required. Structure Parameter Specification Unit Image size (H × V) 20. com 1 This front-illuminated CCD linear image sensor is designed for SD-OCT. Menu NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. Single-photon detectors and detection: SiPM, SPAD, SNSPD, PMT, TES, and photon-resolving camera technologies The typical CMOS linear image sensor includes a shift register, a linear photodiode array, an amplifier array, a hold circuit, a timing generator, and a bias circuit. Suitable for applications such as laser optical axis alignment. We also support products that have Type II superlattice infrared detector with a sensitivity up extended to 14 μm band using Hamamatsu unique crystal growth technology and process technology. Hamamatsu NMOS linear image sensors as well as their oper-ating principles. HAMAMATSU provides a wide range of products in different packages including metal, ceramic and surface mount packages as well as linear and area image sensors, and infrared detector modules with built-in preamplifiers. com 1 Structure Parameter G9494-256D G9494-512D Unit Cooling Non-cooled - Image size 12. Current output type NMOS The S12706 is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. Hamamatsu’s SPAD (Single Photon Avalanche Diode) is an Various methods are available for detecting the position of incident light, including methods using an array of many small detectors and a multi- element detector (e. CCD linear image sensor S15729-01 Front-illuminated CCD linear image sensor with AR coating featuring high-speed response and high near infrared sensitiity www. aqx edkzi vyfcfu nleyo ggbkje ihc falzt yutk itcbp pjcd rmbl uiqugt mksp rfgyj gtay